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| PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 01 -- 21 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5420D. 1.2 Features s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp 1 ms IC = 4 A; IB = 400 mA [2] Conditions open base [1] Min - Typ 50 Max 20 4 15 70 Unit V A A m Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Pulse test: tp 300 s; 0.02. Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym014 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ordering information Package Name PBSS4420D SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code D4 Type number PBSS4420D 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation single pulse; tp 1 ms Tamb 25 C [2] [3] [4] [1] [2] [5] Conditions open emitter open base open collector [1] Min - Max 20 20 5 4 15 0.8 2 360 600 750 1.1 2.5 Unit V V V A A A A mW mW mW W W single pulse; tp 1 ms 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 2 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor Table 5: Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg [1] [2] [3] [4] [5] Parameter junction temperature ambient temperature storage temperature Conditions Min -65 -65 Max 150 +150 +150 Unit C C C Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Operated under pulsed conditions: Duty cycle 10 % and pulse width tp 10 ms. 1600 Ptot (mW) 1200 (1) 006aaa270 800 (2) (3) 400 (4) 0 -75 -25 25 75 125 175 Tamb (C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB; 6 cm2 collector mounting pad (3) FR4 PCB; 1 cm2 collector mounting pad (4) FR4 PCB; standard footprint Fig 1. Power derating curves 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 3 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [2] [3] [4] [1] [2] [5] Min - Typ - Max 350 208 160 113 50 45 Unit K/W K/W K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] [4] [5] thermal resistance from junction to solder point Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Operated under pulsed conditions: Duty cycle 10 % and pulse width tp 10 ms. 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 006aaa271 10 (8) (9) (10) 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; standard footprint (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 4 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aaa272 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 10 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; mounting pad for collector 1 cm2 (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 5 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 006aaa273 10 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; mounting pad for collector 6 cm2 (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 6 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb= 25 C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = 20 V; IE = 0 A VCB = 20 V; IE = 0 A; Tj = 150 C VCE = 20 V; VBE = 0 V VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.5 A VCE = 2 V; IC = 1 A VCE = 2 V; IC = 2 A VCE = 2 V; IC = 4 A VCE = 2 V; IC = 6 A VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 200 mA IC = 4 A; IB = 400 mA IC = 6 A; IB = 600 mA RCEsat VBEsat collector-emitter saturation resistance base-emitter saturation voltage IC = 4 A; IB = 400 mA IC = 0.5 A; IB = 50 mA IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA IC = 4 A; IB = 400 mA VBEon td tr ton ts tf toff fT Cc [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] Min 300 300 250 200 100 - Typ 450 430 400 310 230 30 60 110 200 300 50 0.79 0.81 0.83 1.0 0.79 12 36 48 230 50 280 100 60 Max 0.1 50 0.1 0.1 50 90 150 280 420 70 0.85 0.9 1 1.1 1 - Unit A A A A ICES IEBO hFE mV mV mV mV mV m V V V V V ns ns ns ns ns ns MHz pF base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency VCE = 2 V; IC = 2 A VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = -0.15 A VCE = 10 V; IC = 0.1 A; f = 100 MHz - collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz Pulse test: tp 300 s; 0.02. 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 7 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 1000 hFE 800 (1) 006aaa328 1.4 VBE (mV) 1.2 1.0 0.8 (1) (2) 006aaa329 600 (2) 400 (3) 0.6 (3) 0.4 0.2 200 0 10-1 1 10 102 103 104 105 IC (mA) 0 10-1 1 10 102 103 104 105 IC (mA) VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 5. DC current gain as a function of collector current; typical values 10 VCEsat (V) 1.0 (1) Fig 6. Base-emitter voltage as a function of collector current; typical values 10 VCEsat (V) 1 006aaa331 006aaa330 10-1 (2) (3) 10-1 (1) 10-2 10-2 (2) (3) 10-3 10-1 1 10 102 103 104 105 IC (mA) 10-3 10-1 1 10 102 103 104 105 IC (mA) IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 8 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 1.5 VBEsat (V) 1.3 1.1 006aaa332 103 RCEsat () 102 (1) 006aaa333 0.9 0.7 10 (1) (2) (2) 1 (3) (3) 0.5 10-1 0.3 0.1 10-1 10-2 10-1 1 10 102 103 104 105 IC (mA) 1 10 102 103 104 105 IC (mA) IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 9 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 10 IC (A) 8 006aaa334 (1) (2) (3) (4) (5) (6) (7) 102 RCEsat () 10 006aaa335 6 (8) 1 (9) 4 (10) (1) 10-1 (2) (3) 2 0 0 0.4 0.8 1.2 1.6 2.0 VCE (V) 10-2 10-1 1 10 102 103 104 105 IC (mA) Tamb = 25 C (1) IB = 80 mA (2) IB = 72 mA (3) IB = 64 mA (4) IB = 56 mA (5) IB = 48 mA (6) IB = 40 mA (7) IB = 32 mA (8) IB = 24 mA (9) IB = 16 mA (10) IB = 8 mA IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 10 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff IC 90 % output pulse (idealized waveform) IC (100 %) 10 % t td ton tr ts toff tf 006aaa003 Fig 13. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 VI R1 R2 RC Vo (probe) 450 DUT oscilloscope mlb826 VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = -0.15 A Fig 14. Test circuit for switching times 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 11 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 9. Package outline Plastic surface mounted package; 6 leads SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 01-05-04 04-11-08 Fig 15. Package outline SOT457 (SC-74) 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 12 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package PBSS4420D SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 For further information and the availability of packing methods, see Section 15. T1: normal taping T2: reverse taping 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 13 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Release date 20050421 Data sheet status Product data sheet Change notice Doc. number 9397 750 14028 Supersedes Document ID PBSS4420D_1 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 14 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14028 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 21 April 2005 15 of 16 Philips Semiconductors PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 21 April 2005 Document number: 9397 750 14028 Published in The Netherlands |
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